Semiconductor structure and manufacturing method thereof

ABSTRACT

A semiconductor structure includes a substrate; a first die, disposed over the substrate, wherein the first die includes a first die dielectric layer, and a first die substrate disposed on the first die dielectric layer; a second die, disposed over the first die and vertically overlapping the first die; an inter-die structure, disposed between and separating the first die and the second die; and a first through via, penetrating the first die substrate and protruding from a top surface and a bottom surface of the first die substrate, wherein a top of the first through via is disposed in the inter-die structure and a bottom of the first through via is disposed in the first die dielectric layer.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No. 15/688,574, entitled “SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF” filed on Aug. 28, 2017, which is incorporated herein by reference.

BACKGROUND

Electronic equipments using semiconductor devices are essential for many modern applications. With the advancement of electronic technology, the semiconductor devices are becoming increasingly smaller in size while having greater functionality and greater amounts of integrated circuitry. Due to the miniaturized scale of the semiconductor device, a chip on wafer (CoW) is widely used to integrate several chips into a single semiconductor device. During the CoW operation, a number of chips are assembled on a single semiconductor device. Furthermore, numerous manufacturing operations are implemented within such a small semiconductor device.

However, the manufacturing operations of the semiconductor device involve many steps and operations on such a small and thin semiconductor device. The manufacturing of the semiconductor device in a miniaturized scale becomes more complicated. An increase in a complexity of manufacturing the semiconductor device may cause deficiencies such as poor electrical interconnection, delamination of components, or other issues, resulting in a high yield loss of the semiconductor device and increase of manufacturing cost. As such, there are many challenges for modifying a structure of the semiconductor devices and improving the manufacturing operations.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is emphasized that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a schematic cross sectional view of a semiconductor structure in accordance with some embodiments of the present disclosure.

FIG. 2 is a schematic cross sectional view of a semiconductor structure in accordance with some embodiments of the present disclosure.

FIG. 3 is a schematic cross sectional view of a semiconductor structure in accordance with some embodiments of the present disclosure.

FIG. 4 is a flow diagram of a method of manufacturing a semiconductor structure in accordance with some embodiments of the present disclosure.

FIGS. 5A-5J are schematic views of manufacturing a semiconductor structure by a method of FIG. 4 in accordance with some embodiments of the present disclosure.

DETAILED DESCRIPTION OF THE DISCLOSURE

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

In this document, the term “coupled” may also be termed as “electrically coupled”, and the term “connected” may be termed as “electrically connected”. “Coupled” and “connected” may also be used to indicate that two or more elements cooperate or interact with each other.

Other features and processes may also be included. For example, testing structures may be included to aid in the verification testing of the 3D packaging or 3DIC devices. The testing structures may include, for example, test pads formed in a redistribution layer or on a substrate that allows the testing of the 3D packaging or 3DIC, the use of probes and/or probe cards, and the like. The verification testing may be performed on intermediate structures as well as the final structure. Additionally, the structures and methods disclosed herein may be used in conjunction with testing methodologies that incorporate intermediate verification of known good dies to increase the yield and decrease costs.

A semiconductor structure is manufactured by a number of operations. During manufacturing of the semiconductor structure, semiconductor chips with different functionalities and dimensions are integrated into a single module. The semiconductor chips are disposed on a substrate or wafer, and a molding is formed to encapsulate the semiconductor chips, and then several connectors are disposed on the molding and the semiconductor chips to electrically connect the substrate and the semiconductor chips with external circuitry. The semiconductor chips and the substrate are electrically communicable with the external circuitry through several vias (e.g. through molding via (TMV), through integrated circuit via (TIV), etc.) formed within the molding. However, the semiconductor structure in such configuration has large form factor, large pitch between vias (e.g. greater than 200 um), and small I/O counts, which are undesirable and may not meet demand.

In the present disclosure, a semiconductor structure is disclosed. The semiconductor structure includes a substrate, a first die disposed on the substrate, a second die disposed on the substrate, several vias extended within the second die, a molding disposed on the substrate and surrounding the first die and the second die, an interconnect structure disposed over the molding, the first die and the second die, and a conductive bump disposed over the interconnect structure. The substrate and the first die are electrically connected with the RDL and the conductive bump through the vias. The vias in the second die can be configured in small pitch (e.g. less than 10 um) As such, a number of I/O terminals can be increased, an overall dimension of the semiconductor structure can be reduced or minimized, and electrical performance of the semiconductor structure can be enhanced.

FIG. 1 is a schematic cross sectional view of a semiconductor structure 100 in accordance with various embodiments of the present disclosure. In some embodiments, the semiconductor structure 100 includes a substrate 101, a first die 102, a second die 103, a molding 104, an interconnect structure 105 and a first conductive bump 107.

In some embodiments, the semiconductor structure 100 is a semiconductor package. In some embodiments, the semiconductor structure 100 is an integrated fan out (InFO) package, where I/O terminals of the first die 102 or the second die 103 are fanned out and redistributed over a surface of the first die 102 or the second die 103 in a greater area. In some embodiments, the semiconductor structure 100 is a three dimensional integrated circuit (3D IC). In some embodiments, the semiconductor structure 100 is a chip on wafer (CoW) structure. In some embodiments, the semiconductor structure 100 is a system in package (SiP) structure.

In some embodiments, the substrate 101 is a semiconductive substrate. In some embodiments, the substrate 101 is a carrier, a wafer, an interposer or the like. In some embodiments, the substrate 101 is a silicon wafer or silicon interposer. In some embodiments, the substrate 101 includes semiconductive material such as silicon, germanium, gallium, arsenic, or combinations thereof. In some embodiments, the substrate 101 includes material such as ceramic, glass, polymer or the like. In some embodiments, the substrate 101 includes organic material. In some embodiments, the substrate 101 is fabricated with a predetermined functional circuit thereon. In some embodiments, the substrate 101 includes several conductive traces and several electrical components such as transistor, diode, etc. disposed within the substrate 101. In some embodiments, the substrate 101 includes application processor (AP). In some embodiments, the substrate 101 has a quadrilateral, rectangular, square, polygonal or any other suitable shape.

In some embodiments, the substrate 101 includes a first surface 101 a-1 and a second surface 101 a-2 opposite to the first surface 101 a-1. In some embodiments, the first surface 101 a-1 is a front side of the substrate 101, and the second surface 101 a-2 is a back side of the substrate 101. In some embodiments, the first surface 101 a-1 is an active side that several electrical components are disposed thereon. In some embodiments, the second surface 101 a-2 is an inactive side that electrical component disposed thereon is absent.

In some embodiments, a substrate dielectric layer 101 b is disposed over or on the substrate 101. In some embodiments, the substrate dielectric layer 101 b is disposed over the first surface 101 a-1 of the substrate 101. In some embodiments, the substrate dielectric layer 101 b includes several layers of dielectric material stacking over each other. In some embodiments, the substrate dielectric layer 101 b includes dielectric material such as silicon oxide, silicon nitride, undoped silicon glass or the like. In some embodiments, the substrate dielectric layer 101 b includes polymeric material. In some embodiments, the substrate dielectric layer 101 b includes polyimide (PI), polybenzoxazole (PBO) or the like.

In some embodiments, a substrate conductive member 101 c is disposed over the substrate 101 and surrounded by the substrate dielectric layer 101 b. In some embodiments, the substrate conductive member 101 c is disposed within or over the substrate dielectric layer 101 b. In some embodiments, the substrate conductive member 101 c extends within the substrate dielectric layer 101 b. In some embodiments, the substrate conductive member 101 c extends through one or more layers of the substrate dielectric layer 101 b. In some embodiments, the substrate conductive member 101 c includes conductive material such as gold, silver, copper, nickel, tungsten, aluminum, tin and/or alloys thereof.

In some embodiments, the substrate conductive member 101 c includes a substrate land portion 101 c-1 and a substrate via portion 101 c-2 extended from and coupled with the substrate land portion 101 c-1. In some embodiments, the substrate land portion 101 c-1 is laterally extended within or over the substrate dielectric layer 101 b. In some embodiments, the substrate via portion 101 c-2 is vertically extended within the substrate dielectric layer 101 b and passes through at least one layer of the substrate dielectric layer 101 b. In some embodiments, the substrate land portion 101 c-1 and the substrate via portion 101 c-2 are stacked over each other. In some embodiments, the substrate land portion 101 c-1 and the substrate via portion 101 c-2 are stacked alternately.

In some embodiments, the substrate land portion 101 c-1 is disposed over the substrate dielectric layer 101 b. In some embodiments, the substrate land portion 101 c-1 is at least partially exposed from the substrate dielectric layer 101 b. In some embodiments, the substrate land portion 101 c-1 is a bonding pad for receiving, bonding with or electrically connecting with a conductive structure or a circuitry.

In some embodiments, the first die 102 is disposed over or on the substrate 101. In some embodiments, the first die 102 is disposed over or on the first surface 101 a-1 of the substrate 101. In some embodiments, the first die 102 is disposed over or on the substrate dielectric layer 101 b. In some embodiments, the first die 102 is fabricated with a predetermined functional circuit within the first die 102. In some embodiments, the first die 102 is singulated from a semiconductive wafer by a mechanical or laser blade. In some embodiments, the first die 102 comprises a variety of electrical circuits suitable for a particular application. In some embodiments, the electrical circuits include various devices such as transistors, capacitors, resistors, diodes and/or the like.

In some embodiments, the first die 102 is a logic device die, graphics processing unit (GPU) die, application processing (AP) die, memory die, dynamic random access memory (DRAM) die, high bandwidth memory (HBM) die or the like. In some embodiments, the first die 102 is a chip or a package. In some embodiments, the first die 102 has a top cross section (a cross section from the top view of the semiconductor structure 100 as shown in FIG. 1) in a quadrilateral, a rectangular or a square shape.

In some embodiments, the first die 102 includes a first die substrate 102 a, a first dielectric layer 102 b disposed between the first die substrate 102 a and the substrate 101, and a first conductive member 102 c surrounded by the first dielectric layer 102 b. In some embodiments, the first die substrate 102 a includes semiconductive materials such as silicon or other suitable materials. In some embodiments, the first die substrate 102 a is a silicon substrate. In some embodiments, the first die substrate 102 a includes several circuitries and one or more active elements such as transistors etc. disposed over or in the first die substrate 102 a. In some embodiments, the first die substrate 102 a includes a third surface 102 a-1, a fourth surface 102 a-2 opposite to the third surface 102 a-1 and a sidewall 102 a-3 substantially orthogonal to the third surface 102 a-1 and the fourth surface 102 a-2. In some embodiments, the third surface 102 a-1 is an active side that several electrical components are disposed thereon. In some embodiments, the fourth surface 102 a-2 is an inactive side that electrical component disposed thereon is absent.

In some embodiments, the first dielectric layer 102 b is disposed between the first die substrate 102 a and the substrate 101. In some embodiments, the first dielectric layer 102 b is disposed below the first die substrate 102 a. In some embodiments, the first dielectric layer 102 b is disposed on the substrate dielectric layer 101 b. In some embodiments, the first dielectric layer 102 b is in contact with the substrate dielectric layer 101 b. In some embodiments, the first dielectric layer 102 b includes several layers of dielectric material stacking over each other.

In some embodiments, a first interface 102 d is disposed between the substrate dielectric layer 101 b and the first dielectric layer 102 b. In some embodiments, the first interface 102 d is horizontally extended. In some embodiments, the first interface 102 d is substantially parallel to the third surface 102 a-1 and the fourth surface 102 a-2 and is substantially orthogonal to the sidewall 102 a-3 of the first die 102. In some embodiments, the first dielectric layer 102 b includes dielectric material such as silicon oxide, silicon nitride, undoped silicon glass or the like. In some embodiments, the first dielectric layer 102 b includes polymeric material. In some embodiments, the first dielectric layer 102 b includes polyimide (PI), polybenzoxazole (PBO) or the like.

In some embodiments, the first conductive member 102 c is surrounded by the first dielectric layer 102 b. In some embodiments, the first conductive member 102 c is disposed within or over the first dielectric layer 102 b. In some embodiments, the first conductive member 102 c extends within the first dielectric layer 102 b. In some embodiments, the first conductive member 102 c extends through one or more layers of the first dielectric layer 102 b. In some embodiments, the first conductive member 102 c is configured to route a path of circuitry from the first die substrate 102 a and redistribute I/O terminals of the first die substrate 102 a. In some embodiments, the first conductive member 102 c is configured to electrically connect the first die 102 with a circuitry or conductive structure external to the first die 102. In some embodiments, the first conductive member 102 c is electrically connected with the substrate conductive member 101 c. In some embodiments, the first conductive member 102 c is disposed on and bonded with the substrate conductive member 101 c, such that the first die 102 is electrically connected to the substrate 101.

In some embodiments, a second interface 102 e is disposed between the substrate conductive member 101 c and the first conductive member 102 c. In some embodiments, the second interface 102 e is horizontally extended. In some embodiments, the second interface 102 e is substantially parallel to the third surface 102 a-1 and the fourth surface 102 a-2 and is substantially orthogonal to the sidewall 102 a-3 of the first die 102. In some embodiments, the first conductive member 102 c includes conductive material such as gold, silver, copper, nickel, tungsten, aluminum, tin and/or alloys thereof.

In some embodiments, the first conductive member 102 c includes a first land portion 102 c-1 and a first via portion 102 c-2 extended from and coupled with the first land portion 102 c-1. In some embodiments, the first land portion 102 c-1 is laterally extended within or over the first dielectric layer 102 b. In some embodiments, the first via portion 102 c-2 is vertically extended within the first dielectric layer 102 b and passes through at least one layer of the first dielectric layer 102 b. In some embodiments, the first land portion 102 c-1 and the first via portion 102 c-2 are stacked over each other. In some embodiments, the first land portion 102 c-1 and the first via portion 102 c-2 are stacked alternately.

In some embodiments, the first land portion 102 c-1 is disposed over the first dielectric layer 102 b. In some embodiments, the first land portion 102 c-1 is at least partially exposed from the first dielectric layer 102 b. In some embodiments, the first land portion 102 c-1 is a bonding pad for receiving, bonding with or electrically connecting with a conductive structure or a circuitry. In some embodiments, the first land portion 102 c-1 is disposed on and bonded with the substrate land portion 101 c-1.

In some embodiments, the second die 103 is disposed over or on the substrate 101. In some embodiments, the second die 103 is disposed over or on the first surface 101 a-1 of the substrate 101. In some embodiments, the second die 103 is disposed over or on the substrate dielectric layer 101 b. In some embodiments, the second die 103 is fabricated with a predetermined functional circuit within the second die 103. In some embodiments, the second die 103 is singulated from a semiconductive wafer by a mechanical or laser blade. In some embodiments, the second die 103 comprises a variety of electrical circuits suitable for a particular application. In some embodiments, the electrical circuits include various devices such as transistors, capacitors, resistors, diodes and/or the like. In some embodiments, the second die 103 is a functional die.

In some embodiments, the first die 102 is a logic device die, graphics processing unit (GPU) die, application processing (AP) die, memory die, dynamic random access memory (DRAM) die, high bandwidth memory (HBM) die or the like. In some embodiments, the second die 103 is a chip or a package. In some embodiments, the second die 103 is a dummy die. In some embodiments, the second die 103 has a top cross section (a cross section from the top view of the semiconductor structure 100 as shown in FIG. 1) in a quadrilateral, a rectangular or a square shape. In some embodiments, a thickness of the first die 102 is substantially different from or same as a thickness of the second die 103.

In some embodiments, the second die 103 includes a second die substrate 103 a, a second dielectric layer 103 b disposed between the second die substrate 103 a and the substrate 101, and a second conductive member 103 c surrounded by the second dielectric layer 103 b. In some embodiments, the second die substrate 103 a includes semiconductive materials such as silicon or other suitable materials. In some embodiments, the second die substrate 103 a is a silicon substrate. In some embodiments, the second die substrate 103 a includes several circuitries and one or more active elements such as transistors etc. disposed over or in the second die substrate 103 a. In some embodiments, the second die substrate 103 a includes a fifth surface 103 a-1, a sixth surface 103 a-2 opposite to the fifth surface 103 a-1 and a sidewall 103 a-3 substantially orthogonal to the fifth surface 103 a-1 and the sixth surface 103 a-2. In some embodiments, the fifth surface 103 a-1 is an active side that several electrical components are disposed thereon. In some embodiments, the sixth surface 103 a-2 is an inactive side that electrical component disposed thereon is absent.

In some embodiments, the second dielectric layer 103 b is disposed between the second die substrate 103 a and the substrate 101. In some embodiments, the second dielectric layer 103 b is disposed below the second die substrate 103 a. In some embodiments, the second dielectric layer 103 b is disposed on the substrate dielectric layer 101 b. In some embodiments, the second dielectric layer 103 b is in contact with the substrate dielectric layer 101 b. In some embodiments, the second dielectric layer 103 b includes several layers of dielectric material stacking over each other.

In some embodiments, a third interface 103 d is disposed between the substrate dielectric layer 101 b and the second dielectric layer 103 b. In some embodiments, the third interface 103 d is horizontally extended. In some embodiments, the third interface 103 d is substantially parallel to the fifth surface 103 a-1 and the sixth surface 103 a-2 and is substantially orthogonal to the sidewall 103 a-3 of the second die 103. In some embodiments, the second dielectric layer 103 b includes dielectric material such as silicon oxide, silicon nitride, undoped silicon glass or the like. In some embodiments, the second dielectric layer 103 b includes polymeric material. In some embodiments, the second dielectric layer 103 b includes polyimide (PI), polybenzoxazole (PBO) or the like.

In some embodiments, the second conductive member 103 c is surrounded by the second dielectric layer 103 b. In some embodiments, the second conductive member 103 c is disposed within or over the second dielectric layer 103 b. In some embodiments, the second conductive member 103 c extends within the second dielectric layer 103 b. In some embodiments, the second conductive member 103 c extends through one or more layers of the second dielectric layer 103 b. In some embodiments, the second conductive member 103 c is configured to route a path of circuitry from the second die substrate 103 a and redistribute I/O terminals of the second die substrate 103 a. In some embodiments, the second conductive member 103 c is configured to electrically connect the second die 103 with a circuitry or conductive structure external to the second die 103. In some embodiments, the second conductive member 103 c is electrically connected with the substrate conductive member 101 c. In some embodiments, the second conductive member 103 c is disposed on and bonded with the substrate conductive member 101 c, such that the second die 103 is electrically connected to the substrate 101.

In some embodiments, a fourth interface 103 e is disposed between the substrate conductive member 101 c and the second conductive member 103 c. In some embodiments, the fourth interface 103 e is horizontally extended. In some embodiments, the fourth interface 103 e is substantially parallel to the fifth surface 103 a-1 and the sixth surface 103 a-2 and is substantially orthogonal to the sidewall 103 a-3 of the second die 103. In some embodiments, the second conductive member 103 c includes conductive material such as gold, silver, copper, nickel, tungsten, aluminum, tin and/or alloys thereof.

In some embodiments, the second conductive member 103 c includes a second land portion 103 c-1 and a second via portion 103 c-2 extended from and coupled with the second land portion 103 c-1. In some embodiments, the second land portion 103 c-1 is laterally extended within or over the second dielectric layer 103 b. In some embodiments, the second via portion 103 c-2 is vertically extended within the second dielectric layer 103 b and passes through at least one layer of the second dielectric layer 103 b. In some embodiments, the second land portion 103 c-1 and the second via portion 103 c-2 are stacked over each other. In some embodiments, the second land portion 103 c-1 and the second via portion 103 c-2 are stacked alternately.

In some embodiments, the second land portion 103 c-1 is disposed over the second dielectric layer 103 b. In some embodiments, the second land portion 103 c-1 is at least partially exposed from the second dielectric layer 103 b. In some embodiments, the second land portion 103 c-1 is a bonding pad for receiving, bonding with or electrically connecting with a conductive structure or a circuitry. In some embodiments, the second land portion 103 c-1 is disposed on and bonded with the substrate land portion 101 c-1.

In some embodiments, the second die 103 includes a third dielectric layer 103 f disposed on the second die substrate 103 a and a third conductive member 103 g surrounded by the third dielectric layer 103 f. In some embodiments, the third dielectric layer 103 f is disposed over or on the sixth surface 103 a-2 of the second die 103. In some embodiments, the third dielectric layer 103 f includes several layers of dielectric material stacking over each other. In some embodiments, the third dielectric layer 103 f includes dielectric material such as silicon oxide, silicon nitride, undoped silicon glass or the like. In some embodiments, the third dielectric layer 103 f includes polymeric material. In some embodiments, the second dielectric layer 103 b includes polyimide (PI), polybenzoxazole (PBO) or the like.

In some embodiments, the third conductive member 103 g is disposed within or over the third dielectric layer 103 f. In some embodiments, the third conductive member 103 g extends within the third dielectric layer 103 f. In some embodiments, the third conductive member 103 g extends through one or more layers of the third dielectric layer 103 f. In some embodiments, the third conductive member 103 g is configured to electrically connect the second die 103 with a circuitry or conductive structure external to the second die 103. In some embodiments, the third conductive member 103 g includes conductive material such as gold, silver, copper, nickel, tungsten, aluminum, tin and/or alloys thereof.

In some embodiments, several vias 103 h are extended within the second die 103. In some embodiments, the via 103 h is extended through the second die substrate 103 a. In some embodiments, the via 103 h is extended between the second dielectric layer 103 b and the third dielectric layer 103 f. In some embodiments, the via 103 h is electrically connected with and extended between the second conductive member 103 c and the third conductive member 103 g. In some embodiments, the substrate conductive member 101 c is electrically connected with the third conductive member 103 g through the via 103 h and the second conductive member 103 c. In some embodiments, the via 103 h is surrounded by the second die substrate 103, the second dielectric layer 103 b and the third dielectric layer 103 f. In some embodiments, the via 103 h is vertically extended within the second die 103. In some embodiments, the via 103 h includes a conductive material such as copper, silver, gold, aluminum, etc. In some embodiments, the via 103 h is a through substrate via or a through silicon via (TSV). In some embodiments, a distance D between two adjacent vias 103 h is substantially less than or equal to 10 um. In some embodiments, the distance D is substantially less than 20 um.

In some embodiments, the molding 104 is disposed over or on the substrate 101. In some embodiments, the molding 104 surrounds the first die 102 and the second die 103. In some embodiments, the molding 104 is in contact with the fourth surface 102 a-2 and the sidewall 102 a-3 of the first die 102. In some embodiments, the molding 104 is in contact with the sidewall 103 a-3 of the second die 103. In some embodiments, the molding 104 is disposed between the first die 102 and the second die 103. In some embodiments, the molding 104 is disposed on the substrate dielectric layer 101 b. In some embodiments, the third dielectric layer is at least partially exposed from the molding 104. In some embodiments, the molding 104 can be a single layer film or a composite stack. In some embodiments, the molding 104 has a high thermal conductivity, a low moisture absorption rate and a high flexural strength. In some embodiments, the molding 104 includes various materials, such as molding compound, molding underfill, epoxy, resin, or the like. In some embodiments, the molding 104 includes oxide such as silicon oxide or the like.

In some embodiments, the interconnect structure 105 is disposed over or on the molding 104, the first die 102 and the second die 103. In some embodiments, the interconnect structure 105 is a redistribution layer (RDL) or a post passivation interconnect (PPI). In some embodiments, the interconnect structure 105 includes a fourth dielectric layer 105 a and a fourth conductive member 105 b.

In some embodiments, the fourth dielectric layer 105 a is disposed over or on the molding 104, the first die 102 and the second die 103. In some embodiments, the fourth dielectric layer 105 a is in contact with the molding 104 and the third dielectric layer 103 f. In some embodiments, the molding 104 is disposed between the first die 102 and the fourth dielectric layer 105 a. In some embodiments, the via 103 h is disposed between the fourth dielectric layer 105 a and the substrate 101. In some embodiments, the via 103 h is disposed between the fourth dielectric layer 105 a and the substrate dielectric layer 101 b. In some embodiments, the fourth dielectric layer 105 a includes several layers of dielectric material stacking over each other. In some embodiments, the fourth dielectric layer 105 a includes dielectric material such as silicon oxide, silicon nitride, undoped silicon glass or the like. In some embodiments, the fourth dielectric layer 105 a includes polymeric material. In some embodiments, the fourth dielectric layer 105 a includes polyimide (PI), polybenzoxazole (PBO) or the like.

In some embodiments, the fourth conductive member 105 b is surrounded by the fourth dielectric layer 105 a. In some embodiments, the fourth conductive member 105 b is disposed within or over the fourth dielectric layer 105 a. In some embodiments, the fourth conductive member 105 b extends within the fourth dielectric layer 105 a. In some embodiments, the fourth conductive member 105 b extends through one or more layers of the fourth dielectric layer 105 a. In some embodiments, the fourth conductive member 105 b is configured to route a path of circuitry from the first die 102 or the second die 103 and redistribute I/O terminals of the first die 102 or the second die 103. In some embodiments, the fourth conductive member 105 b is configured to electrically connect the substrate 101, the first die 102 or the second die 103 with a circuitry or conductive structure external to the substrate 101, the first die 102 or the second die 103. In some embodiments, the fourth conductive member 105 b is electrically connected with the third conductive member 103 g, the via 103 h, the second conductive member 103 c, the first conductive member 102 c or the substrate conductive member 101 c. In some embodiments, the fourth conductive member 105 b is electrically connected and bonded with the third conductive member 103 g or the via 103 h. In some embodiments, the substrate 101 is electrically connected with the fourth conductive member 105 b through the via 103 h. In some embodiments, the first die 102 is electrically connected with the fourth conductive member 105 b through the substrate 101 and the via 103 h. In some embodiments, the fourth conductive member 105 b includes conductive material such as gold, silver, copper, nickel, tungsten, aluminum, tin and/or alloys thereof.

In some embodiments, the fourth conductive member 105 b includes a fourth land portion 105 b-1 and a fourth via portion 105 b-2 extended from and coupled with the fourth land portion 105 b-1. In some embodiments, the fourth land portion 105 b-1 is laterally extended within or over the fourth dielectric layer 105 a. In some embodiments, the fourth via portion 105 b-2 is vertically extended within the fourth dielectric layer 105 a and passes through at least one layer of the fourth dielectric layer 105 a. In some embodiments, the fourth land portion 105 b-1 and the fourth via portion 105 b-2 are stacked over each other. In some embodiments, the fourth land portion 105 b-1 and the fourth via portion 105 b-2 are stacked alternately.

In some embodiments, a bump pad 106 is disposed over or on the interconnect structure 105. In some embodiments, the bump pad 106 is disposed over and electrically connected with the fourth conductive member 105 b. In some embodiments, the bump pad 106 is disposed over or surrounded by the fourth dielectric layer 105 a. In some embodiments, the bump pad 106 is at least partially exposed from the fourth dielectric layer 105 a. In some embodiments, the bump pad 106 is configured to receive a conductive member or the like. In some embodiments, the bump pad 106 is an under bump metallization (UBM) pad. In some embodiments, the bump pad 106 is electrically connected with the fourth conductive member 105 b, the third conductive member 103 g, the via 103 b, the second conductive member 103 c, the first conductive member 102 c or the substrate conductive member 101 c.

In some embodiments, the first conductive bump 107 is disposed over or on the interconnect structure 105. In some embodiments, the first conductive bump 107 is disposed over or on the fourth dielectric layer 105 a and electrically connected with the fourth conductive member 105 b. In some embodiments, the first conductive bump 107 is disposed on and bonded with the bump pad 106. In some embodiments, the first conductive bump 107 includes conductive material such as includes solder, copper, nickel, gold or etc. In some embodiments, the first conductive bump 107 is a solder ball, a ball grid array (BGA) ball, controlled collapse chip connection (C4) bump, a pillar or the like. In some embodiments, the first conductive bump 107 is in a spherical, hemispherical or cylindrical shape.

FIG. 2 is a schematic cross section view of a semiconductor structure 200 in accordance with various embodiments of the present disclosure. In some embodiments, the semiconductor structure 200 includes a substrate 101, a first die 102, a second die 103, a molding 104, an interconnect structure 105 and a first conductive bump 107, which have configurations similar to those described above or illustrated in FIG. 1.

In some embodiments, a second conductive bump 108 is disposed between the first die 102 and the substrate 101 or between the second die 103 and the substrate 101. In some embodiments, the second conductive bump 108 is disposed between the first conductive member 102 c and the substrate conductive member 101 c. In some embodiments, the second conductive bump 108 is disposed between the second conductive member 103 c and the substrate conductive member 101 c. In some embodiments, the first conductive member 102 c and the substrate conductive member 101 c are electrically connected by the second conductive bump 108. In some embodiments, the second conductive member 102 c and the substrate conductive member 101 c are electrically connected by the second conductive bump 108. In some embodiments, the first die 102 is electrically connected with the substrate 101 through the second conductive bump 108. In some embodiments, the second die 103 is electrically connected with the substrate 101 through the second conductive bump 108. In some embodiments, the second conductive bump 108 includes conductive material such as includes solder, copper, nickel, gold or etc. In some embodiments, the second conductive bump 108 is a microbump, a pillar or the like. In some embodiments, the second conductive bump 108 is in a spherical, hemispherical or cylindrical shape.

In some embodiments, the second conductive bump 108 is surrounded by an underfill material 109. In some embodiments, the underfill material 109 surrounds a portion of the first die 102 or a portion of the second die 103. In some embodiments, the underfill material 109 surrounds the first dielectric layer 102 b or the second dielectric layer 103 b. In some embodiments, the underfill material 109 is disposed over or on the substrate dielectric layer 101 b. In some embodiments, the underfill material 109 fills spacing between two adjacent second conductive bumps 108. In some embodiments, the underfill material 109 is an electrically insulated adhesive for protecting the second conductive bump 108 or securing a bonding between the first die 102 and the substrate 101 or between the second die 103 and the substrate 101. In some embodiments, the underfill material 109 includes epoxy, resin, epoxy molding compounds or etc.

FIG. 3 is a schematic cross section view of a semiconductor structure 300 in accordance with various embodiments of the present disclosure. In some embodiments, the semiconductor structure 300 includes a substrate 101, a molding 104, an interconnect structure 105 and a first conductive bump 107, which have configurations similar to those described above or illustrated in FIG. 1 or 2.

In some embodiments, the semiconductor structure 300 includes several second dies 103 a within the molding 104 and stacking over each other. In some embodiments, the second dies 103 are stacked over the substrate 101. In some embodiments, the second die 103 has configuration similar to the one described above or illustrated in FIG. 1 or 2. In some embodiments, the second dies 103 are electrically connected with each other by several vias 103 h disposed within the second dies 103 a. In some embodiments, the second dies 103 are electrically connected with the interconnect structure 105. In some embodiments, the second dies 103 are electrically connected with the fourth conductive member 105 b by the vias 103 h.

In some embodiments, a through dielectric via 110 is disposed and extended within the molding 104. In some embodiments, the through dielectric via 110 is a through molding via (TMV). In some embodiments, the through dielectric via 110 is extended through the molding 104. In some embodiments, the through dielectric via 110 is extended between the third dielectric layers 103 f or between the third dielectric layer 103 f and the substrate dielectric layer 101 b. In some embodiments, the through dielectric via 110 is electrically connected with the interconnect structure 105 or the substrate 101. In some embodiments, the through dielectric via 110 is electrically connected with the fourth conductive member 105 b or the substrate conductive member 101 c. In some embodiments, the through dielectric via 110 is vertically extended through the molding 104. In some embodiments, the through dielectric via 110 includes a conductive material such as copper, silver, gold, aluminum, etc.

In the present disclosure, a method of manufacturing a semiconductor structure (100, 200, 300) is also disclosed. In some embodiments, the semiconductor structure (100, 200, 300) is formed by a method 400. The method 400 includes a number of operations and the description and illustration are not deemed as a limitation as the sequence of the operations. FIG. 4 is an embodiment of the method 400 of manufacturing the semiconductor structure (100, 200, 300). The method 400 includes a number of operations (401, 402, 403, 404, 405, 406 and 407).

In operation 401, a substrate 101 is provided or received as shown in FIG. 5A. In some embodiments, the substrate 101 is a carrier, a wafer, an interposer or the like. In some embodiments, the substrate 101 is a silicon wafer or silicon interposer. In some embodiments, the substrate 101 includes a first surface 101 a-1 and a second surface 101 a-2 opposite to the first surface 101 a-1.

In some embodiments, a substrate dielectric layer 101 b is disposed over or on the substrate 101. In some embodiments, the substrate dielectric layer 101 b is disposed over or on the first surface 101 a-1 of the substrate 101. In some embodiments, the substrate dielectric layer 101 b includes dielectric material such as silicon oxide, silicon nitride, undoped silicon glass or the like. In some embodiments, the substrate dielectric layer 101 b includes polymeric material such as polyimide (PI), polybenzoxazole (PBO) or the like. In some embodiments, the substrate dielectric layer 101 b is disposed by spin coating, chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), high-density plasma CVD (HDPCVD) or any other suitable operations.

In some embodiments, a substrate conductive member 101 c is formed over or on the substrate 101 and surrounded by the substrate dielectric layer 101 b. In some embodiments, the substrate conductive member 101 c is at least partially exposed from the substrate dielectric layer 101 b. In some embodiments, the substrate conductive member 101 c includes conductive material such as gold, silver, copper, nickel, tungsten, aluminum, tin and/or alloys thereof. In some embodiments, the substrate conductive member 101 c is formed by removing a portion of the substrate dielectric layer 101 b to form an opening and then disposing a conductive material into the opening. In some embodiments, the removal of the portion of the substrate dielectric layer 101 b includes photolithography, etching or any other suitable operations. In some embodiments, the disposing of the conductive material includes sputtering, electroplating or any other suitable operations. In some embodiments, the substrate 101, the substrate dielectric layer 101 b and the substrate conductive member 101 c have configurations similar to those described above or illustrated in any of FIGS. 1-3.

In operation 402, a first die 102 is provided or received, and is disposed over or on the substrate 101 as shown in FIGS. 5B and 5C. In some embodiments, the first die 102 is placed and bonded with the substrate 101. In some embodiments, the first die 102 is singulated from a semiconductive wafer. In some embodiments, the first die 102 comprises a variety of electrical circuits suitable for a particular application. In some embodiments, the electrical circuits include various devices such as transistors, capacitors, resistors, diodes and/or the like.

In some embodiments, the first die 102 includes a first die substrate 102 a, a first dielectric layer 102 b disposed between the first die substrate 102 a and the substrate 101, and a first conductive member 102 c surrounded by the first dielectric layer 102 b. In some embodiments, the first die substrate 102 a includes semiconductive materials such as silicon or other suitable materials. In some embodiments, the first die substrate 102 a is a silicon substrate. In some embodiments, the first die substrate 102 a includes a third surface 102 a-1, a fourth surface 102 a-2 opposite to the third surface 102 a-1 and a sidewall 102 a-3 substantially orthogonal to the third surface 102 a-1 and the fourth surface 102 a-2.

In some embodiments, the first dielectric layer 102 b is disposed between the first die substrate 102 a and the substrate 101. In some embodiments, the first dielectric layer 102 b includes dielectric material such as silicon oxide, silicon nitride, undoped silicon glass or the like. In some embodiments, the first dielectric layer 102 b includes polymeric material such as polyimide (PI), polybenzoxazole (PBO) or the like. In some embodiments, the first dielectric layer 102 b is disposed by spin coating, chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), high-density plasma CVD (HDPCVD) or any other suitable operations.

In some embodiments, the first dielectric layer 102 b is bonded with the substrate dielectric layer 101 b to form a first interface 102 d between the substrate dielectric layer 101 b and the first dielectric layer 102 b. In some embodiments, the first dielectric layer 102 b and the substrate dielectric layer 101 b are bonded by hybrid bonding or any other suitable operations.

In some embodiments, the first conductive member 102 c is formed over or surrounded by the first dielectric layer 102 b. In some embodiments, the first conductive member 102 c is at least partially exposed from the first dielectric layer 102 b. In some embodiments, the first conductive member 102 c includes conductive material such as gold, silver, copper, nickel, tungsten, aluminum, tin and/or alloys thereof. In some embodiments, the first conductive member 102 c is formed by removing a portion of the first dielectric layer 102 b to form an opening and then disposing a conductive material into the opening. In some embodiments, the removal of the portion of the first dielectric layer 102 b includes photolithography, etching or any other suitable operations. In some embodiments, the disposing of the conductive material includes sputtering, electroplating or any other suitable operations.

In some embodiments, the first conductive member 102 c is electrically connected and bonded with the substrate conductive member 101 c. In some embodiments, the first conductive member 102 c is bonded with the substrate conductive member 101 c to form a second interface 102 e between the substrate conductive member 101 c and the first conductive member 102 c. In some embodiments, the substrate conductive member 101 c and the first conductive member 102 c are bonded by hybrid bonding or any other suitable operations.

In some embodiments, the first die 102, the first die substrate 102 a, the first dielectric layer 102 b and the first conductive member 102 c have configurations similar to those described above or illustrated in any of FIGS. 1-3.

In some embodiments as shown in FIG. 5C, the first conductive member 102 c and the substrate conductive member 101 c bonded by a second conductive bump 108. In some embodiments, the second conductive bump 108 is disposed between the first conductive member 102 c and the substrate conductive member 101 c by ball dropping, solder pasting, stencil printing or any other suitable operations. In some embodiments, the second conductive bump 108 includes conductive material such as includes solder, copper, nickel, gold or etc. In some embodiments, the second conductive bump 108 is a microbump, a pillar or the like. In some embodiments, an underfill material 109 is disposed to surround the second conductive bump 108. In some embodiments, the underfill material 109 is disposed by flowing, injection or any other suitable operations.

In operation 403, a second die 103 is provided or received as shown in FIG. 5D. In some embodiments, the second die 103 is singulated from a semiconductive wafer. In some embodiments, the second die 103 comprises a variety of electrical circuits suitable for a particular application. In some embodiments, the electrical circuits include various devices such as transistors, capacitors, resistors, diodes and/or the like.

In some embodiments, the second die 103 includes a second die substrate 103 a, a second dielectric layer 103 b disposed under the second die substrate 103 a, and a second conductive member 103 c surrounded by the second dielectric layer 103 b. In some embodiments, the second die substrate 103 a includes semiconductive materials such as silicon or other suitable materials. In some embodiments, the second die substrate 103 a is a silicon substrate. In some embodiments, the second die substrate 103 a includes a fifth surface 103 a-1, a sixth surface 103 a-2 opposite to the fifth surface 103 a-1 and a sidewall 103 a-3 substantially orthogonal to the fifth surface 103 a-1 and the sixth surface 103 a-2.

In some embodiments, the second dielectric layer 103 b is disposed over or on the fifth surface 103 a-1. In some embodiments, the second dielectric layer 103 b includes dielectric material such as silicon oxide, silicon nitride, undoped silicon glass or the like. In some embodiments, the second dielectric layer 103 b includes polymeric material such as polyimide (PI), polybenzoxazole (PBO) or the like. In some embodiments, the second dielectric layer 103 b is disposed by spin coating, chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), high-density plasma CVD (HDPCVD) or any other suitable operations.

In some embodiments, the second conductive member 103 c is formed over or surrounded by the second dielectric layer 103 b. In some embodiments, the second conductive member 103 c is at least partially exposed from the second dielectric layer 103 b. In some embodiments, the second conductive member 103 c includes conductive material such as gold, silver, copper, nickel, tungsten, aluminum, tin and/or alloys thereof. In some embodiments, the second conductive member 103 c is formed by removing a portion of the second dielectric layer 103 b to form an opening and then disposing a conductive material into the opening. In some embodiments, the removal of the portion of the second dielectric layer 103 b includes photolithography, etching or any other suitable operations. In some embodiments, the disposing of the conductive material includes sputtering, electroplating or any other suitable operations.

In some embodiments, the second die 103 includes a third dielectric layer 103 f disposed on the second die substrate 103 a and a third conductive member 103 g surrounded by the third dielectric layer 103 f. In some embodiments, the third dielectric layer 103 f is disposed over or on the sixth surface 103 a-2 of the second die 103. In some embodiments, the third dielectric layer 103 f includes dielectric material such as silicon oxide, silicon nitride, undoped silicon glass or the like. In some embodiments, the third dielectric layer 103 f includes polymeric material such as polyimide (PI), polybenzoxazole (PBO) or the like. In some embodiments, the second dielectric layer 103 b is disposed by spin coating, chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), high-density plasma CVD (HDPCVD) or any other suitable operations.

In some embodiments, the third conductive member 103 g is formed over or surrounded by the third dielectric layer 103 f. In some embodiments, the third conductive member 103 g is at least partially exposed from the third dielectric layer 103 f. In some embodiments, the third conductive member 103 g includes conductive material such as gold, silver, copper, nickel, tungsten, aluminum, tin and/or alloys thereof. In some embodiments, the third conductive member 103 g is formed by removing a portion of the third dielectric layer 103 f to form an opening and then disposing a conductive material into the opening. In some embodiments, the removal of the portion of the third dielectric layer 103 f includes photolithography, etching or any other suitable operations. In some embodiments, the disposing of the conductive material includes sputtering, electroplating or any other suitable operations.

In some embodiments, a via 103 h is formed within the second die 103. In some embodiments, the via 103 h is extended through the second die substrate 103 a. In some embodiments, the via 103 h is extended between the second dielectric layer 103 b and the third dielectric layer 103 f. In some embodiments, the via 103 h is electrically connected with and extended between the second conductive member 103 c and the third conductive member 103 g. In some embodiments, the via 103 h includes a conductive material such as copper, silver, gold, aluminum, etc. In some embodiments, the via 103 h is a through substrate via or a through silicon via (TSV). In some embodiments, the via 103 h is formed by removing a portion of the second die 103 to form a recess extended within the second die 103 and disposing a conductive material into the recess. In some embodiments, the via 103 h is formed by removing a portion of the second die substrate 103 a, the second dielectric layer 103 b or the third dielectric layer 103 f to form the recess and disposing the conductive material into the recess. In some embodiments, the removal of the portion of the second die 103 includes photolithography, etching or any other suitable operations. In some embodiments, the disposing of the conductive material includes sputtering, electroplating or any other suitable operations.

In operation 404, the second die 103 is disposed over or on the substrate 101 as shown in FIGS. SE and SF. In some embodiments, the second die 103 is bonded with the substrate 101. In some embodiments, the second dielectric layer 103 b is bonded with the substrate dielectric layer 101 b to form a third interface 103 d between the substrate dielectric layer 101 b and the second dielectric layer 103 b. In some embodiments, the second dielectric layer 103 b and the substrate dielectric layer 101 b are bonded by hybrid bonding or any other suitable operations.

In some embodiments, the second conductive member 103 c is electrically connected and bonded with the substrate conductive member 101 c. In some embodiments, the second conductive member 103 c is bonded with the substrate conductive member 101 c to form a fourth interface 103 e between the substrate conductive member 101 c and the second conductive member 103 c. In some embodiments, the substrate conductive member 101 c and the second conductive member 103 c are bonded by hybrid bonding or any other suitable operations.

In some embodiments, the second die 103, the second die substrate 103 a, the second dielectric layer 103 b, the second conductive member 103 c, the third dielectric layer 103 f and the third conductive member 103 g have configurations similar to those described above or illustrated in any of FIGS. 1-3.

In some embodiments as shown in FIG. 5F, the second conductive member 103 c and the substrate conductive member 101 c bonded by the second conductive bump 108. In some embodiments, the second conductive bump 108 is disposed between the second conductive member 103 c and the substrate conductive member 101 c by ball dropping, solder pasting, stencil printing or any other suitable operations. In some embodiments, the second conductive bump 108 includes conductive material such as includes solder, copper, nickel, gold or etc. In some embodiments, the second conductive bump 108 is a microbump, a pillar or the like. In some embodiments, the underfill material 109 is disposed to surround the second conductive bump 108. In some embodiments, the underfill material 109 is disposed by flowing, injection or any other suitable operations.

In operation 405, a molding 104 is formed as shown in FIGS. 5G and 5H. In some embodiments, the molding 104 is formed over the substrate 101 and around the first die 102 and the second die 103. In some embodiments, the molding 104 is formed by disposing a molding material over the substrate 101 to cover the first die 102 and the second die 103 as shown in FIG. 5G, and then removing a portion of the molding material to expose at least a portion of the second die 103 as shown in FIG. 5H. In some embodiments, the molding material is disposed by transfer molding, injection molding, over molding or any other suitable operations. In some embodiments, the portion of the molding material is removed by grinding, etching or any other suitable operations. In some embodiments, the molding 104 is in contact with the fourth surface 102 a-2 and the sidewall 102 a-3 of the first die 102. In some embodiments, the molding 104 is in contact with the sidewall 103 a-3 of the second die 103. In some embodiments, the first die 102 is entirely covered by the molding 104. In some embodiments, the second die 103 is at least partially exposed from the molding 104. In some embodiments, the third dielectric layer 103 f is at least partially exposed from the molding 104. In some embodiments, the molding 104 is disposed over the first die 102 a. In some embodiments, the molding 104 includes various materials, such as oxide, molding have configuration similar to the one described above or illustrated in any of FIGS. 1-3.

In operation 406, an interconnect structure 105 is formed as shown in FIG. 5I. In some embodiments, the interconnect structure 105 is formed over the molding 104, the first die 102 a and the second die 103 a. In some embodiments, the interconnect structure 105 is formed by disposing a fourth dielectric layer 105 a over the molding 104 and the second die 103 and forming a fourth conductive member 105 b surrounded by the fourth dielectric layer 105 a. In some embodiments, the fourth conductive member 105 b is formed over or within the fourth dielectric layer 105 a.

In some embodiments, the fourth dielectric layer 105 a includes dielectric material such as silicon oxide, silicon nitride, undoped silicon glass or the like. In some embodiments, the fourth dielectric layer 105 a includes polymeric material such as polyimide (PI), polybenzoxazole (PBO) or the like. In some embodiments, the fourth dielectric layer 105 a is disposed by spin coating, chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), high-density plasma CVD (HDPCVD) or any other suitable operations.

In some embodiments, the fourth conductive member 105 b is formed over or surrounded by the fourth dielectric layer 105 a. In some embodiments, the fourth conductive member 105 b is at least partially exposed from the fourth dielectric layer 105 a. In some embodiments, the fourth conductive member 105 b includes conductive material such as gold, silver, copper, nickel, tungsten, aluminum, tin and/or alloys thereof. In some embodiments, the fourth conductive member 105 b is formed by removing a portion of the fourth dielectric layer 105 a to form an opening and then disposing a conductive material into the opening. In some embodiments, the removal of the portion of the fourth dielectric layer 105 a includes photolithography, etching or any other suitable operations. In some embodiments, the disposing of the conductive material includes sputtering, electroplating or any other suitable operations. In some embodiments, the interconnect structure 105, the fourth dielectric layer 105 a and the fourth conductive member 105 b have configurations similar to the one described above or illustrated in any of FIGS. 1-3.

In some embodiments, a bump pad 106 is formed over or on the interconnect structure 105. In some embodiments, the bump pad 106 is formed over or surrounded by the fourth dielectric layer 105 a. In some embodiments, the bump pad 106 is formed over and electrically connected with the fourth conductive member 105 b. In some embodiments, the bump pad 106 is formed by evaporation, sputtering, electroplating or any other suitable operations. In some embodiments, the bump pad 106 has configuration similar to the one described above or illustrated in any of FIGS. 1-3.

In operation 407, a first conductive bump 107 is disposed over the interconnect structure 105 as shown in FIG. 5J. In some embodiments, the first conductive bump 107 is disposed over and electrically connected with the fourth conductive member 105 b. In some embodiments, the first conductive bump 107 is bonded with the bump pad 106. In some embodiments, the conductive bump 107 is disposed by ball dropping, solder pasting, stencil printing or any other suitable operations. In some embodiments, the conductive bump 107 is a solder joint, a solder bump, a solder ball, a ball grid array (BGA) ball, a controlled collapse chip connection (C4) bump or the like. In some embodiments, the conductive bump 107 is a conductive pillar or post. In some embodiments, the conductive bump 107 has configuration similar to the one described above or illustrated in any of FIGS. 1-3. In some embodiments, a semiconductor structure 100 as shown in FIG. 1 is formed.

Some embodiments of the present disclosure provide a semiconductor structure. The semiconductor structure includes a substrate; a first die, disposed over the substrate, wherein the first die includes a first die dielectric layer, and a first die substrate disposed on the first die dielectric layer; a second die, disposed over the first die and vertically overlapping the first die; an inter-die structure, disposed between and separating the first die and the second die; and a first through via, penetrating the first die substrate and protruding from a top surface and a bottom surface of the first die substrate, wherein a top of the first through via is disposed in the inter-die structure and a bottom of the first through via is disposed in the first die dielectric layer.

Some embodiments of the present disclosure provide a semiconductor structure. The semiconductor structure includes a substrate; a first die, disposed on the substrate; a second die, disposed on the substrate and arranged laterally adjacent to the first die; a molding, disposed on the substrate and separating the first die and the second die; a first dielectric layer, disposed on the first die, the second die, and the molding; a first through via, disposed in the first die and protruding from the first die, wherein a portion of the first through via is disposed in the first dielectric layer; and a through dielectric via, disposed in the molding, wherein a dimension of the through dielectric via is greater than a dimension of the first through via.

Some embodiments of the present disclosure provide a semiconductor structure. The semiconductor structure includes a substrate; a first die, disposed over the substrate; a second die, disposed over the substrate and arranged laterally adjacent to the first die; a third die, disposed vertically over the first die; a fourth die, disposed vertically over the second die and arranged laterally adjacent to the third die; a molding, disposed between the first die and the second die, and between the third die and the fourth die; an interconnect structure, disposed over the third die and the fourth die; and a plurality of through vias, disposed in each of the first die, the second die, the third die, and the fourth die, wherein the plurality of through vias is electrically connected to the interconnect structure, and wherein the first die and the fourth die are electrically connected by the plurality of through vias.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. A semiconductor structure, comprising: a substrate; a first die, disposed over the substrate, wherein the first die includes a first die dielectric layer, and a first die substrate disposed on the first die dielectric layer; a second die, disposed over the first die and vertically overlapping the first die; an inter-die structure, disposed between and separating the first die and the second die; a first through via, penetrating the first die substrate and protruding from a top surface and a bottom surface of the first die substrate, wherein a top of the first through via is disposed in the inter-die structure and a bottom of the first through via is disposed in the first die dielectric layer; a through dielectric via, disposed over the substrate and at a same elevation as the first die; and a molding material, disposed between the first die and the through dielectric via, wherein the through dielectric via penetrates the molding material, and a dimension of the through dielectric via is greater than a dimension of the first through via.
 2. The semiconductor structure of claim 1, wherein the top of the first through via is free from coverage of the inter-die structure.
 3. The semiconductor structure of claim 1, wherein the second die comprises a second die dielectric layer, and a second die substrate, disposed on the second die dielectric layer.
 4. The semiconductor structure of claim 3, further comprising: a second through via, penetrating the second die substrate and protruding from a top surface and a bottom surface of the second die substrate, wherein the second through via is electrically connected to the first through via.
 5. The semiconductor structure of claim 4, further comprising: a first dielectric layer, disposed over the second die, and including a first conductive member, wherein a top of the second through via is disposed in the first dielectric layer; and a second dielectric layer, disposed between the first die and the substrate, and including a second conductive member, wherein the first conductive member is electrically connected to the second conductive member through the first through via and the second through via.
 6. The semiconductor structure of claim 5, further comprising a conductive bump disposed over the first dielectric layer and electrically connected to the first conductive member.
 7. The semiconductor structure of claim 4, wherein the second through via vertically overlaps the first through via from a cross section.
 8. The semiconductor structure of claim 4, wherein the second through via is electrically connected to the first conductive member.
 9. A semiconductor structure, comprising: a substrate; a first die, disposed on the substrate; a second die, disposed on the substrate and arranged laterally adjacent to the first die; a molding, disposed on the substrate and separating the first die and the second die; a first dielectric layer, disposed on the first die, the second die, and the molding; a first through via, disposed in the first die and protruding from the first die, wherein a portion of the first through via is disposed in the first dielectric layer; and a through dielectric via, disposed in the molding, wherein a dimension of the through dielectric via is greater than a dimension of the first through via.
 10. The semiconductor structure of claim 9, wherein the through dielectric via penetrates the molding.
 11. The semiconductor structure of claim 9, wherein the first die, the second die, and the through dielectric via are at a same elevation.
 12. The semiconductor structure of claim 9, wherein a height of the through dielectric via is substantially equal to a height of the first die.
 13. The semiconductor structure of claim 9, further comprising: a second through via, disposed in the second die and protruding from the second die, wherein a portion of the second through via is disposed in the first dielectric layer.
 14. The semiconductor structure of claim 13, further comprising: a plurality of conductive members, disposed in the first dielectric layer, wherein top surfaces of the plurality of conductive members are exposed from the first dielectric layer, and the first through via and the second through via are electrically connected to different conductive members of the plurality of conductive members.
 15. The semiconductor structure of claim 9, further comprising: a second dielectric layer, disposed under the molding, the first die, the second die, and the through dielectric via, wherein the first through via is separated from the second dielectric layer and electrically connected to a conductive member disposed in the second dielectric layer.
 16. The semiconductor structure of claim 15, wherein bottom surfaces of the molding, the first die, the second die, and the through dielectric via are coupled to a top surface of the second dielectric layer.
 17. A semiconductor structure, comprising: a substrate; a first die, disposed over the substrate; a second die, disposed over the substrate and arranged laterally adjacent to the first die; a third die, disposed vertically over the first die; a fourth die, disposed vertically over the second die and arranged laterally adjacent to the third die; a molding, disposed between the first die and the second die, and between the third die and the fourth die; an interconnect structure, disposed over the third die and the fourth die; and a plurality of through vias, disposed in each of the first die, the second die, the third die, and the fourth die, wherein the plurality of through vias is electrically connected to the interconnect structure, and wherein the first die and the fourth die are electrically connected by the plurality of through vias.
 18. The semiconductor structure of claim 17, wherein the first die, the second die, the third die and the fourth die are electrically connected with each other.
 19. The semiconductor structure of claim 17, further comprising: a first through dielectric via, disposed in the molding and laterally adjacent to the first die; and a second through dielectric via, disposed in the molding and over the first through via.
 20. The semiconductor structure of claim 19, wherein the second through dielectric via vertically overlaps the first through dielectric via. 